发明名称 Verfahren zur Herstellung von Kristall-Dünnschichten von Typ Oxide durch eine schnelle thermische Behandlung
摘要 Preparation of a thin layer (5) of crystalline oxide such as a garnet, a spinel ferrite, a hexaferrite, a perovskite, an acousto-optical oxide, a phase transition oxide or a superconductive oxide employing an annealing by irradiation by means of a lamp (1) although the oxide to be crystallised may be transparent to the radiation of the lamp. First of all a thin amorphous layer is prepared, of an oxide which is substoichiometric in oxygen of the same elements as the oxide to be crystallised, to obtain an opaque layer absorbing the radiation. This layer of substoichiometric oxide is then subjected to annealing under irradiation in order to crystallise it and the stoichiometry in respect of oxygen of the crystallised layer is restored to make it transparent. The thin layers prepared in this way can be employed in particular in reenterable thermo-magneto-optical discs on substrates which do not withstand the crystallisation temperature of this layer, for example substrates made of organic material. <IMAGE>
申请公布号 DE69128684(T2) 申请公布日期 1998.07.23
申请号 DE1991628684T 申请日期 1991.09.26
申请人 COMMISSARIAT A L'ENERGIE ATOMIQUE, PARIS, FR 发明人 BECHEVET, BERNARD, F-38640 CLAIX, FR;DAVAL, JACQUES, F-38240 MEYLAN, FR;ROLLAND, BERNARD, F-38240 MEYLAN, FR;VALON, BRUNO, F-38100 GRENOBLE, FR
分类号 B01J19/12;C23C14/58;C30B1/02;C30B29/16;C30B33/02 主分类号 B01J19/12
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