BURIED RIDGE TYPE SEMICONDUCTOR LASER AND ITS MANUFACTURE

摘要

PROBLEM TO BE SOLVED: To manufacture a buried ridge type semiconductor laser which uses a semiconductor thin film containing Al as a buried layer at a high yield. SOLUTION: At the time of forming a ridge by utilizing the etching rate difference between a clad layer 104 of a second conductivity and an intermediate layer 105 of the second conductivity which occurs when the semiconductor materials or compositions of the layers 104 and 105 are made different from each other, the hood of the intermediate layer 105 is formed. A buried layer 106 containing Al can be prevented from being etched in a process for removing an oxide film mask by using HF or BHF by forming an area where the buried layer 106 does not grow due to the shadow effect of the hood of the layer 105 at the time of growing the buried layer 106. Therefore, the deterioration of the characteristics and yield of a buried ridge type semiconductor laser resulting from the coming-off of the buried layer 106 can be prevented.