发明名称 LOW POWER-CONSUMPTION TYPE SEMICONDUCTOR INTEGRATED CIRCUIT
摘要 <p>PROBLEM TO BE SOLVED: To carry out high-speed operation even at low power-supply voltage, and to reduce power consumption by a leakage current at the time of a standby mode by lowering a threshold value at the time of operation and elevating the threshold value at the time of the standby mode. SOLUTION: A principal section is composed of a microprocessor-unit(MPU) 1, substrate bias circuits 2-1, 2-2 and a clock control circuit 3. The substrate bias circuits 2-1, 2-2 are stopped, MOS transistors MP, MN for the MPU 1 are set at low threshold values, a clock CKm at a high speed is supplied, and high-speed operation at low power-supply voltage is carried out at the time of operation. The clock CKm fed to the clock control circuit is stopped, while the substrate bias circuits 2-1, 2-2 are operated, and the threshold values of the MOS transistors MP, MN are elevated at the time of a standby mode. Sub-threshold characteristic is improved by increasing the threshold values, thereby reducing a leakage current and power consumption.</p>
申请公布号 JPH10189884(A) 申请公布日期 1998.07.21
申请号 JP19980005376 申请日期 1998.01.14
申请人 HITACHI LTD 发明人 MIYAMOTO MASABUMI;TONOMURA MOTONOBU;HANAWA MAKOTO;SEKI KOICHI
分类号 G06F1/04;G11C11/408;H01L21/822;H01L21/8234;H01L21/8238;H01L27/04;H01L27/06;H01L27/092;H03K19/094;(IPC1-7):H01L27/04;H01L21/823 主分类号 G06F1/04
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