发明名称 PROBING PAD STRUCTURE OF SEMICONDUCTOR WAFER
摘要 <p>PROBLEM TO BE SOLVED: To protect a probing pad against imperfect contact caused by an insulating film on the pad by a simple structure by a method wherein the surface of the probing pad is turned rugged. SOLUTION: A lower wiring 6 is formed on a base layer 5. An interlayer insulating film 7 is formed on the lower wiring layer 6, and a large number of openings 9 are provided to the interlayer insulating film 7 through a photolithographic process for the formation of a multi-contact hole. An upper pad 8 is formed on the multi-contact hole by patterning. In this case, the surface of the upper pad 8 is turned rugged by the openings 9 of the multi-contact hole and the projections 10 of the interlayer insulating film 7 left between the openings 9. The upper pad 8 makes an electrical continuity with the lower wiring 6 through the intermediary of the multi-contact hole. By this setup, a probe needle is protected against imperfect contact caused by an insulating film on the surface of a pad, so that a measurement of high reliability can be carried out so as to improve semiconductor device in quality, productivity, and yield.</p>
申请公布号 JPH10189671(A) 申请公布日期 1998.07.21
申请号 JP19960343625 申请日期 1996.12.24
申请人 SONY CORP 发明人 KAWADA SHUJI
分类号 H01L21/66;H01L21/3205;H01L23/52;(IPC1-7):H01L21/66;H01L21/320 主分类号 H01L21/66
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