发明名称 |
Method for reducing precipitate defects using a plasma treatment post BPSG etchback |
摘要 |
The present invention provides a method of manufacturing an interlevel dielectric layer (ILD) which has reduced precipitates after an etch back of the borophosphosilicate glass (BPSG) ILD layer. A dielectric layer containing boron and phosphorous is deposited on the substrate. A reflow process is performed on the dielectric layer at a temperature in a range of between about 800 DEG and 950 DEG C. The dielectric layer is etched back using a reactive ion etch. In an important step, a surface treatment is performed on the dielectric layer thorough a plasma treatment. A plasma source gas for the surface treatment is of a gas selected from the group consisting of Ar, NO2, N2, and O2, at a temperature in a range of between about 250 DEG and 400 DEG C. at a pressure in a range of between about 1 mtorr and 5 torr, at a RF power in a range of between about 300 and 400 watts, and for a time in a range of between about 15 and 80 seconds.
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申请公布号 |
US5783493(A) |
申请公布日期 |
1998.07.21 |
申请号 |
US19970789718 |
申请日期 |
1997.01.27 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. |
发明人 |
YEH, RANN SHYAN;CHANG, CHAO-HSIN;CHANG, HSIEN-WEN |
分类号 |
H01L21/311;H01L21/768;(IPC1-7):H01L21/00 |
主分类号 |
H01L21/311 |
代理机构 |
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主权项 |
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地址 |
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