| 摘要 |
PROBLEM TO BE SOLVED: To make a switching between the mobilityμi in an inverted layer and the mobilityμb in a bulk, while taking a value conforming to an actual device without deteriorating the convergence of calculated results. SOLUTION: An inverted region in a substrate for forming the channel of an insulated gate field effect transistor is designated (ST1) as a region for switching the mobility fromμb toμi and a mobilityμis determined (ST8). Specified physical equations are then solved (ST9, ST10) using the mobilityμthus determined, while switching on the boundary of inverted region and specified characteristics are calculated (ST12, ST13). The region is designated (ST1), preferably based on any one of the impurity concentration distribution and the carrier density distribution, the width of curve of energy band with respect to Fermi potential, or the position coordinates in the substrate. The direction in parallel with the surface of substrate can be designated, based on any one of the conductivity type of impurities on the surface of substrate or the variation of carrier plane density, and the direction in the depth of substrate can be designated based on any one of the position coordinates thereof or the position of the interface of depletion layer.
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