Semiconductor device and method for forming the same

摘要

There is disclosed a short-channel FET which is excellent in properties and adapted for mass production. FETs of this construction can be packed at a high density. There is also disclosed a method for forming this FET. The semiconductor substrate of this FET has a plateau-shaped portion protruding from the body of the substrate. This plateau-shaped portion is substantially identical in contour with a gate electrode formed over it. The gate electrode is in register with the plateau-shaped portion. With respect to the relation of doped regions of the substrate becoming the source and drain to the channel region, the narrowest portion in the channel region is not in contact with a gate-insulating film.