发明名称 Diamond wafer and method of producing a diamond wafer
摘要 A diamond wafer including a substrate and a (100) oriented polycrystalline diamond film grown on the substrate for making surface acoustic wave devices, semiconductor devices or abrasion-resistant discs. The (100) oriented film is produced by changing a hydrocarbon ratio in a material gas halfway from a higher value to a lower value. The wafer is monotonously distorted with a distortion height H satisfying 2 mu m</=|H|</=150 mu m. The film is polished to a roughness of less than Rmax50 nm and Ra20 nm.
申请公布号 US5776246(A) 申请公布日期 1998.07.07
申请号 US19950418116 申请日期 1995.04.06
申请人 SUMITOMO ELECTRIC INDUSTRIES, LTD. 发明人 TANABE, KEIICHIRO;SEKI, YUICHIRO;IKEGAYA, AKIHIKO;FUJIMORI, NAOJI;NAKAHATA, HIDEAKI;SHIKATA, SHIN-ICHI
分类号 C23C16/27;C30B25/02;H03H3/08;H03H9/02;(IPC1-7):C30B29/04 主分类号 C23C16/27
代理机构 代理人
主权项
地址