MANUFACTURE OF SEMICONDUCTOR DEVICE

摘要

PURPOSE:To simplify the steps of oxidizing a filed in an isolation of elements by simultaneously forming a field oxide film and a gate insulating film. CONSTITUTION:A thin thermal nitride film 2 is formed on a semiconductor substrate 1, and the nitride film of a part which becomes a field oxide film region in future is selectively removed by etching. Then, with the film 2 as an oxide mask the substrate 1 is wet oxidized, and a thermal nitride oxide film 9 as a gate insulating film and a field oxide film 3 are simultaneously formed. Thus, the manufacturing steps of an MIS semiconductor device can be shortened.