Semiconductor device e.g. DRAM cell

摘要

A semiconductor device has (a) a conductive layer (4a) formed on a substrate main face; (b) an insulating film (5) formed on the substrate main face including the conductive layer; (c) a via (6) which is formed in the insulating film (5) to expose a surface of the conductive layer (4a) and which is partially filled by a conductive plug (7b); (d) a lower electrode (7a) formed in a prescribed region on the insulating film (5) including the top of the via (6), the lower electrode (7a) having a first conductive body section (7c), with an opening section (13) for exposing the top of the plug (7b), and a second conductive body section (7d) formed in and on the side surfaces of the opening section (13), on the insulating film (5) surface and on the top surface of the plug (7b) for electrically connecting the plug and the first conductive body section (7c); and (e) an upper electrode (9) which includes a third conductive body section and which is formed on the lower electrode (7a) with an interposed dielectric film (8). Also claimed is a process for producing the above semiconductor device, preferably in which the second conductive body section (7d) consists of polysilicon with a finely irregular surface and in which the plug (7b) and the first conductive body section (7c) consist of phosphorus-doped polysilicon.