发明名称 Verfahren zum Herstellen von Halbleiterscheiben
摘要 A wafer which allows manufacture of a device to proceed at an exalted yield by preventing the resolution of exposure at the step of photolithography during the manufacture of the device from being impaired is obtained by a method which comprises a slicing step for slicing a single crystal ingot thereby obtaining wafers of the shape of a thin disc, a chamfering step for chamfering the wafer obtained by the slicing step, a lapping step for imparting a flat surface to the chamfered wafer, an etching step for removing mechanical strain remaining in the lapped wafer, an obverse surface-polishing step for polishing one side of the etched wafer, and a cleaning step for cleaning the polished wafer, which method is characterized by interposing between the etching step and the obverse surface-polishing step a reverse surface-preparing step for preparing the shape of the reverse side of the wafer. <IMAGE>
申请公布号 DE69410514(D1) 申请公布日期 1998.07.02
申请号 DE1994610514 申请日期 1994.03.24
申请人 SHIN-ETSU HANDOTAI CO., LTD., TOKIO/TOKYO, JP 发明人 KATO, TADAHIRO, NISHISHIRAKAWA-GUN, FUKUSHIMA-KEN, JP;SHIMA, SUNAO, ANNAKA-SHI GUNMA-KEN, JP;NAKANO, MASAMI, NISHISHIRAKAWA-GUN, FUKUSHIMA-KEN, JP;MASUMURA, HISASHI, NISHISHIRAKAWA-GUN, FUKUSHIMA-KEN, JP;KUDO, HIDEO, NISHISHIRAKAWA-GUN, FUKUSHIMA-KEN, JP
分类号 H01L21/02;H01L21/302;H01L21/304 主分类号 H01L21/02
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