摘要 |
A wafer which allows manufacture of a device to proceed at an exalted yield by preventing the resolution of exposure at the step of photolithography during the manufacture of the device from being impaired is obtained by a method which comprises a slicing step for slicing a single crystal ingot thereby obtaining wafers of the shape of a thin disc, a chamfering step for chamfering the wafer obtained by the slicing step, a lapping step for imparting a flat surface to the chamfered wafer, an etching step for removing mechanical strain remaining in the lapped wafer, an obverse surface-polishing step for polishing one side of the etched wafer, and a cleaning step for cleaning the polished wafer, which method is characterized by interposing between the etching step and the obverse surface-polishing step a reverse surface-preparing step for preparing the shape of the reverse side of the wafer. <IMAGE> |
申请人 |
SHIN-ETSU HANDOTAI CO., LTD., TOKIO/TOKYO, JP |
发明人 |
KATO, TADAHIRO, NISHISHIRAKAWA-GUN, FUKUSHIMA-KEN, JP;SHIMA, SUNAO, ANNAKA-SHI GUNMA-KEN, JP;NAKANO, MASAMI, NISHISHIRAKAWA-GUN, FUKUSHIMA-KEN, JP;MASUMURA, HISASHI, NISHISHIRAKAWA-GUN, FUKUSHIMA-KEN, JP;KUDO, HIDEO, NISHISHIRAKAWA-GUN, FUKUSHIMA-KEN, JP |