| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor integrated circuit device, in which the number of manufacturing process is reduced and a capacitor of high reliability is provided, and a manufacturing method thereof. SOLUTION: A silicon nitride film 10, which is formed in the same manufacturing process as a silicon nitride film acting as such a dielectric substance of a capacitor as a component of a STC(stacked capacitor) type memory cell of a SRAM(static random access memory), is placed under a silicon-oxide- contained insulating film 13 on the side surface of connection holes 15 and 16 provided on a semiconductor region 7, acting as a source and a drain of a MOSFET (metal oxide semiconductor field effect transistor). The silicon nitride film 10 is used as an etching stopper film at formation of the connection holes 15 and 16. |
