发明名称 |
COMPOSITION FOR POLISHING |
摘要 |
PROBLEM TO BE SOLVED: To suppress a decrease in speed for polishing a surface to be polished even after repetitive use by specifying an electric conductivity of a composition for polishing containing colloidal silica, a nitrogen-containing basic compound, and water. SOLUTION: This composition for polishing is adjusted by mixing and dispersing or dissolving colloidal silica and a nitrogen-containing basic compound with/to water at a desired percentage content. The colloidal silica is aqueous colloidal silica or gel silica each including all of stable dispersing elements of amorphous silica in a liquid and its percentage content is preferably 0.1 to 30wt.% of the total quantity of the composition for polishing. The nitrogen basic compound promotes polishing to a surface to be polished by a chemical action and also acts as a dispersant of colloidal silica. Ammonia is typical of the compound and its content is preferably 0.01 to 5wt.%. Further, the electric conductivity of the composition for polishing is 30 to 1500μS/cm. |
申请公布号 |
JPH10172937(A) |
申请公布日期 |
1998.06.26 |
申请号 |
JP19960325619 |
申请日期 |
1996.12.05 |
申请人 |
FUJIMI INKOOPOREETETSUDO:KK |
发明人 |
MIURA SHIRO;KAWAMURA ATSUNORI;TAMAI KAZUMASA |
分类号 |
B24B37/00;C01B33/14;C09K3/14;G11B5/84;H01L21/304 |
主分类号 |
B24B37/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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