发明名称 COMPOSITION FOR POLISHING
摘要 PROBLEM TO BE SOLVED: To suppress a decrease in speed for polishing a surface to be polished even after repetitive use by specifying an electric conductivity of a composition for polishing containing colloidal silica, a nitrogen-containing basic compound, and water. SOLUTION: This composition for polishing is adjusted by mixing and dispersing or dissolving colloidal silica and a nitrogen-containing basic compound with/to water at a desired percentage content. The colloidal silica is aqueous colloidal silica or gel silica each including all of stable dispersing elements of amorphous silica in a liquid and its percentage content is preferably 0.1 to 30wt.% of the total quantity of the composition for polishing. The nitrogen basic compound promotes polishing to a surface to be polished by a chemical action and also acts as a dispersant of colloidal silica. Ammonia is typical of the compound and its content is preferably 0.01 to 5wt.%. Further, the electric conductivity of the composition for polishing is 30 to 1500μS/cm.
申请公布号 JPH10172937(A) 申请公布日期 1998.06.26
申请号 JP19960325619 申请日期 1996.12.05
申请人 FUJIMI INKOOPOREETETSUDO:KK 发明人 MIURA SHIRO;KAWAMURA ATSUNORI;TAMAI KAZUMASA
分类号 B24B37/00;C01B33/14;C09K3/14;G11B5/84;H01L21/304 主分类号 B24B37/00
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