| 摘要 |
PROBLEM TO BE SOLVED: To simultaneously solve the problems on the adhesion of a pole material to a substrate and on the characteristic deterioration, such as fatigue, leakage current, etc., of a ferroelectric thin film capacitor by forming a conductive oxide/metal/conductive oxide hetero-structure on an oxidized silicon substrate. SOLUTION: After a than Rh2 O3 layer 11 is formed on an SiO2 layer 10, a surface Rhx Oy layer 13 is formed by sputtering a metallic Pt-Rh layer 12 itself and an alloy target and a dielectric layer 14 is formed on the layer 13. Then upper electrodes 15 and 16 are formed by again performing the insitu sputtering of a multilayered Rh2 O3 /Pt-Rh and/or Rh2 O3 in a capacitor device structure. Therefore, the problems on the adhesion of a pole material to a substrate and the characteristic deterioration, such as the fatigue, leakage current, etc., of a ferroelectric thin film capacitor device can be solved simultaneously. |
