| 摘要 |
<p>Etchants which are inhibited from influencing a resist pattern and are capable of etching an insulating film at a high rate. One of the etchants, which is used for etching an insulating film on a substrate using a resist as the mask, is characterized by containing 8 to 19 wt.% hydrofluoric acid and 12 to 42 wt.% ammonium fluoride and having a hydrogen ion concentration of 10?-6.0 to 10-1.8¿ mol/L. The other etchant, which is used for etching a silicon oxide film on a substrate using a resist as the mask, is characterized by having an etching rate for the silicon oxide film of 200 nm/min or higher and a resist film loss rate of 50 nm/min or lower.</p> |
