| 摘要 |
<p>An insulated control gate (24), source (30) and drain (31) of a second type of conductivity lie above a channel of the first type. The parts of the source and drain near the channel include respective regions of low doping (26, 27) part of which are covered by floating gates (29, 28). The thickness of the insulation (25) below the floating gates is less than that (23) under the control gate so that voltages applied to the source, drain and control gate allow independent charge and discharge of the floating gates. To read the cell, voltages are applied to the source, drain and control gate and the drain-source current is compared to threshold values to determine the state of the memory.</p> |
