发明名称 Diffusion-bonded sputtering target assembly and method of manufacturing the same
摘要 <p>A sputtering target assembly comprising a sputtering target (1) and a backing plate (2) characterised in that said sputtering target and backing plate is diffusion-bonded with or without an insert (3) or inserts interposed therebetween so as to have solid phase diffusion-bonded interfaces (4), said diffusion-bonded sputtering target substantially maintaining metallurgical characteristic and properties of the sputtering target before it is diffusion-bonded to said backing plate. The solid diffusion bonding of the target and backing plate, with or without one or more insert interposed therebetween, at a low temperature and pressure, causes interdiffusion of their constituent atoms to attain high adhesion and bond strength without attendant deterioration or large deformation of the target material, while inhibiting the crystal growth in the target material. The bond thus obtained proves highly reliable because it undergoes no abrupt decrease in bond strength upon elevation of their service temperature and owing to the solid phase bonding, 100% bonding is achieved with no un-bonded portions such as pores left along the interfaces.</p>
申请公布号 EP0848080(A1) 申请公布日期 1998.06.17
申请号 EP19970118420 申请日期 1993.09.27
申请人 JAPAN ENERGY CORPORATION 发明人 OHHASHI, TATEO;FUKUYO, HIDEAKI;SAWAMURA, ICHIROH;NAKAMURA, KENICHIROU;FUKUSHIMA, ATSUSHI;NAGASAWA, MASARU
分类号 C23C14/34;H01J37/34;(IPC1-7):C23C14/34 主分类号 C23C14/34
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