II-VI group compound semiconductor device,申请号US19960756192-传众专利搜索

发明名称	II-VI group compound semiconductor device
摘要	A II-VI group compound semiconductor device comprising a ZnXMg1-XSYSe1-Y (0</=X</=1, 0</=Y</=1) semiconductor layer, an intermediate layer comprising a compound of an element constituting the semiconductor layer and an additive element of Cd, Te or Hg formed on the semiconductor layer, and an electrode layer containing Ni, Pt or Pd formed on the intermediate layer.
申请公布号	US5767536(A)	申请公布日期	1998.06.16
申请号	US19960756192	申请日期	1996.11.25
申请人		发明人
分类号	H01L21/28;H01L21/363;H01L21/40;H01L21/44;H01L21/443;H01L29/221;H01L29/45;H01L29/47;H01L33/00;H01L33/28;H01L33/40;H01S5/00;(IPC1-7):H01L33/00	主分类号	H01L21/28
代理机构		代理人
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