| 发明名称 |
Gallium nitride-based III-V group compound semiconductor |
| 摘要 |
A gallium nitride-based III-V Group compound semiconductor device has a gallium nitride-based III-V Group compound semiconductor layer provided over a substrate and an ohmic electrode provided in contact with the semiconductor layer. The ohmic electrode is formed of a metallic material, and has been annealed.
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| 申请公布号 |
US5767581(A) |
申请公布日期 |
1998.06.16 |
| 申请号 |
US19960670242 |
申请日期 |
1996.06.17 |
| 申请人 |
NICHIA CHEMICAL INDUSTRIES, LTD. |
发明人 |
NAKAMURA, SHUJI;YAMADA, TAKAO;SENOH, MASAYUKI;YAMADA, MOTOKAZU;BANDO, KANJI |
| 分类号 |
H01L21/00;H01L21/285;H01L29/20;H01L29/72;H01L33/00;H01L33/32;H01L33/38;H01L33/40;H01L33/42;H01L33/44;H01S5/00;H01S5/042;H01S5/323;(IPC1-7):H01L29/78 |
主分类号 |
H01L21/00 |
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