| 摘要 |
An improved delay characteristic compensation circuit for a memory device which is capable of constantly maintaining the characteristic of the delay path by connecting or disconnecting the delay devices to the delay path by detecting quickly the variation of the supply voltage, which includes a signal delay unit for sequentially delaying an input signal; a voltage variation detector for detecting a variation of a digital supply voltage and adjusting the level of a divide voltage with respect to the supply voltage at a predetermined ratio; a code data generator for generating a code data in accordance with the voltage adjusted by the voltage variation detector; and a delay characteristic compensation unit for connecting a predetermined number of delay devices to a delay path of the delay unit in accordance with a code data generated by the code data generator for dividing the same so as to constantly maintain the delay characteristic of the delay unit.
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