发明名称 |
Distributed feedback semiconductor laser and method for fabricating the same |
摘要 |
A distributed feedback semiconductor laser which includes a semiconductor substrate of a first conductive type; a semiconductor multi-layer structure provided on the semiconductor substrate and including an active layer for generating laser light; and a gain-coupled diffraction grating provided between the semiconductor substrate and the semiconductor multi-layer structure. The diffraction grating includes a plurality of curved projections periodically arranged at a surface of the semiconductor substrate and a quantum well light absorption layer for covering the plurality of curved projections. The quantum well light absorption layer includes a light absorption area having a first thickness at each border between two adjacent curved projections and a non-light absorption area having a second thickness which is smaller than the first thickness at a top of each of the curved projections. The light absorption area has a band gap which is narrower than a band gap of the active layer, and the non-light absorption area has a band gap which is wider than the band gap of the active layer.
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申请公布号 |
US5764682(A) |
申请公布日期 |
1998.06.09 |
申请号 |
US19960606455 |
申请日期 |
1996.02.23 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
ISHINO, MASATO;KITOH, MASAHIRO;OTSUKA, NOBUYUKI;MATSUI, YASUSHI |
分类号 |
H01L21/00;H01S5/12;H01S5/34;(IPC1-7):H01S3/19 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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