| 摘要 |
PROBLEM TO BE SOLVED: To enable forming a thicker resist layer be preventing as much as possible a cracking which is developer from the lower end of a second resist layer and penetrates a first resist layer. SOLUTION: Three resist layers 24, 25 and 26 are formed as an undercoating of a semiconductor. When an area of the layers corresponding to an opening 27 for forming an electrode is exposed to light, the light strength for exposure in the area is distributed so that the light for ends of the opening 27 for forming electrode is less strong. By this method, when the resist layers 25 and 26 are developed, the shape of the opening 27 for forming electrode becomes round in its corners 27a. In this structure, since the part of the lower resist layer 24 in which a cracking may be developed is prevented at the maximum from being exposed to light and the concentration of stress produced at the time of development or in subsequent processes can be selaned, the resist layers become resistant to cracking. |
