| 摘要 |
<p>PROBLEM TO BE SOLVED: To improve the quality of picture by a method wherein a polycrystalline silicon film, having a plurality of picture element electrodes connected to a plurail of thin film semiconductor elements and also having specific orientation, is formed on a glass substrate as the active layer of the thin film semiconductor element. SOLUTION: A driving circuit is divided into a scanning circuit 8 and a signal circuit, and the signal circuit is composed of a multiplexer 9, a split matrix switch 10, and a high speed shift register 11 which is externally attached to a substrate 4. The picture element of an indication part 5 is composed of a TFT 20 which is an active element, liquid crystal which is an indication medium, and a capacitor 19 consisting of a pixel electrode, and the pixel is arranged in matrix form. The number of pixel of the indication part 5 is determined by the characteristics of the multiplexer 9 of the signal circuit and a split matrix switch 10, and when a circumference driving circuit is formed using a polysilicon TFT having the orientation 111} of large carrier mobility, the number of pixelxs of the display part 5 and be increase.</p> |
