MANUFACTURE OF SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To prevent an electrical failure that an end of a metal pattern on a dicing line is peeled up to contact with an inner lead or a bonding wire when dicing a semiconductor wafer. SOLUTION: Metal patterns 12, 13 are formed on a semiconductor wafer 11, and a surface protection film 14 is deposited on the overall surface, then is patterned to expose the surface of at least the metal pattern 12 on a dicing line of the metal patterns 12, 13, and a barrier metal 15 is deposited on the overall surface. The barrier metal 15 on the dicing line and the metal pattern 12 on the dicing line of the metal patterns 12, 13 are removed simultaneously by etching, and the semiconductor wafer 11 is diced along the dicing line without the metal pattern 12. This prevents a failure that an end of the metal pattern is peeled up to contact with an inner lead or a bonding wire.