| 摘要 |
For manufacturing an integrated circuit, the production of a design for the circuit that comprises a plurality of MOS transistors is controlled by employment of a circuit simulator. <IMAGE> are calculated in the circuit simulator for the terminal nodes of the MOS transistors upon prescription of the voltages between gate and source Vgs, between drain and source Vds, and between the substrate and source Vbs in a consistent transistor model wherein drift, diffusion and short-channel effects are taken into consideration.
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