Using an output of a leak detector which detects leakage from a dummy memory cell to control a subtrate voltage in a semi conductor memory device

摘要

In a semiconductor memory device, a dummy memory cell is formed on a semiconductor substrate in the same way as the memory cell is formed. A leak detecting means for detecting leakage from the dummy memory cell generates an output signal representing the amount of the leakage. A substrate-voltage generating means controls substrate voltage applied to the semiconductor substrate so as to reduce the amount of leakage from the memory cell in accordance with the output signal supplied to the substrate-voltage generating means by the leak detecting means.