发明名称 |
Method for vapor phase growth |
摘要 |
In the formation of a thin film on the surface of a semiconductor crystal substrate by using a horizontal type vapor phase growth apparatus, the distribution of the thickness and resistivity of the thin film can be properly obtained by adjusting the concentration distribution of the raw material gas in the mixture gas in the width direction of the reaction vessel over the substrate surface. And in the reaction vessel, carrier gas is supplied from the position close to the transfer port of the substrate, and raw material gas is supplied from the position located in the downstream side of a vortex generation region caused by the flow of the carrier gas.
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申请公布号 |
US5755878(A) |
申请公布日期 |
1998.05.26 |
申请号 |
US19950546867 |
申请日期 |
1995.10.23 |
申请人 |
SHIN-ETSU HANDOTAI CO., LTD. |
发明人 |
HABUKA, HITOSHI;MAYUZUMI, MASANORI;TATE, NAOTO;KATAYAMA, MASATAKE |
分类号 |
H01L21/205;C23C16/44;C23C16/455;C30B25/14;(IPC1-7):C30B23/03 |
主分类号 |
H01L21/205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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