| 摘要 |
PROBLEM TO BE SOLVED: To suppress the obstruction against the formation of narrow width lines and the contamination of a treatment device after a corrosion treatment which are caused by the contamination by heat-resistant metal diffused from a silicide layer, in a process for forming very narrow width word lines of the gate interconnect of a semiconductor device. SOLUTION: The gate interconnect of a semiconductor device includes a 1st silicon region 304 formed on a semiconductor substrate 300, a silicide region 306 applied to the 1st silicon region 304, and a 2nd silicon region 308 applied to the silicide region 306. The 2nd silicon region 308 covers the silicide region 306 completely to suppress the contamination caused by heat-resistant metal diffused from the silicide region 306. |
