Semiconductor device with reduced housing thickness and wt.

摘要

The device comprises a semiconductor chip housed in a resin mould. The resin mould has a light shielding seal bonded onto its surface, comprising an outer metal layer for reflecting light and an inner light-absorbing block layer. The resin is epoxy resin contg.carbon black and filler. The metal is Al and Ag.Pref. the thickness of the resin is not greater than 200 microns.The thickness of the device itself is not greater than 1mm