发明名称 |
Low dielectric constant layers via immiscible sol-gel processing |
摘要 |
A method for forming air gaps 22 between metal leads 16 of a semiconductor device. A metal layer is deposited on a substrate 12. The metal layer is etched to form metal leads 16, exposing portions of the substrate 12. A disposable liquid 18 is deposited on the metal leads 16 and the exposed portions of substrate 12, and a top portion of the disposable liquid 18 is removed to lower the disposable liquid 18 to at least the tops of the leads 16. A porous silica precursor film 20 is deposited on the disposable liquid 18 and over the tops of the leads 16. The porous silica precursor film 20 is gelled to form a low-porosity silica film 24. The disposable liquid 18 is removed through the low-porosity silica film 24 to form air gaps 22 between metal leads 16 beneath the low-porosity silica film 24. The air gaps 22 have a low dielectric constant and result in reduced capacitance between the metal leads and decreased power consumption.
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申请公布号 |
US5750415(A) |
申请公布日期 |
1998.05.12 |
申请号 |
US19940250747 |
申请日期 |
1994.05.27 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
GNADE, BRUCE E.;CHO, CHIH-CHEN;SMITH, DOUGLAS M. |
分类号 |
H01L21/314;H01L21/316;H01L21/768;H01L23/522;H01L23/532;(IPC1-7):H01L21/44 |
主分类号 |
H01L21/314 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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