High dielectric constant barium-strontium-niobium oxides for integrated circuit applications

摘要

A charge storage device, such as an integrated circuit memory, including a dielectric comprising a barium-strontium-niobium oxide. A liquid precursor including the metals barium, strontium, and niobium is prepared and applied to a platinum electrode. The precursor is baked and annealed to form a dielectric having the formula BaxSryNbzO30, where x=1.3 to 3.5, y=1.5 to 3.7, and z=10. A top platinum electrode is then formed to provide a memory cell capacitor. Optimum results to date have been obtained with Ba2Sr3Nb10O30, which yields a memory cell dielectric with dielectric constant over 1000 and a leakage current of less than 10-5 amperes per square centimeter for voltages up to 5 volts.