发明名称 MICRODYNODE INTEGRATED ELECTRON MULTIPLIER
摘要 <p>A microdynode electron multiplier provides numerous microchannels extending parallel to one another through a layered structure (20) incorporating insulating spacer layers (38) and dynode layers (36) which either incorporate a conductive electrode layer (54) or are contiguous with a conductive electrode layer. The dynode layers include materials with high electron emissivity. The dynode layers can be biased to different electrical potentials to provide a potential gradient along the length of each microchannel. Multi-stage electron multiplication provides high gain. The device desirably is formed as a monolithic, sealed structure with a cathode structure (26) such as a photocathode and an anode structure (28). The device can provide a multi pixel imaging device of extremely high sensitivity and resolution.</p>
申请公布号 WO1998019341(A1) 申请公布日期 1998.05.07
申请号 US1997019809 申请日期 1997.10.30
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