| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide the reference voltage generating circuit which can generate a stabilized reference voltage against changes of ambient temperature, an external source voltage, and a manufacturing process for a semiconductor device. SOLUTION: When the external source voltage Vcc varies, the drain-source channel current of an NMOS transistor(TR) 24 is varied by varying the gate potential of the TR 24 to control the level of a reference voltage Vref, the potential across a resistor 26 connected to the drain of the MOS TR 24 varies as the current varies to operate an NMOS TR 28 in a subthreshold area by the resistor 26, and thus the voltage level of the gate of the MOS TR 24 is controlled to stabilize the reference voltage Vref to a constant level and also cancel variation with the temperature by the NMOS TRs 24 and 28 having plus and minus reverse temperature coefficeints, thereby performing temperature compensation.</p> |
