发明名称 PHOTOSENSITIVE FILM FOR FAR ULTRAVIOLET RAYS AND PHOTOSENSITIVE FILM PATTERN FORMING METHOD BY USING THE SAME
摘要 PROBLEM TO BE SOLVED: To enhance etching resistance and post exposure delay(PED) stability by using a specified copolymer for the resin of a photosensitive film. SOLUTION: The photosensitive film contains a resin and a mixture of an acid photogenerator and many kinds of additives and the resins comprise the copolymer represented by formula I and the copolymer represented by formula II and in formulae I and II, (x) is 50-90mol%; (y) is 10-50mol%; R1 is a dissolution inhibitor, such as methyl, ethyl, or t-butyl group or the like; and R2 is H atom or methyl group, thus permitting the etching resistance to be enhanced by using polymethyl methacrylate (PMMA) having a high transmissibility at 193nm and combining 4-piperidinecarboxylic acid, and a matrix resin to be manufactured so as to enhance the PED stability by allowing the nitrogen atoms in the piperidine to act on the base.
申请公布号 JPH10115923(A) 申请公布日期 1998.05.06
申请号 JP19970153943 申请日期 1997.06.11
申请人 HYUNDAI ELECTRON IND CO LTD 发明人 KO JIGEN;BOKU CHAORUKEI
分类号 G03F7/004;C08F8/30;C08F220/02;C08F220/58;C08L33/24;G03F7/039;G03F7/26;H01L21/027;(IPC1-7):G03F7/039 主分类号 G03F7/004
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