| 摘要 |
PURPOSE:To reduce the through current, by securing a multistage longitudinal connection for either the P channel MOSFETs or N channel MOSFETs with the gate electrode used in common. CONSTITUTION:When the high output voltage of a TTL is applied to a CMOS inverter, an N channel MOSFET221 plus P channel MOSFET211 and T212 all conduct to flow the through current. The voltage of a source 205 of the T212 drops owing to the voltage produced by the through current and the resistance of conduction of the T211. As a result, the effective gate voltage of the T212 drops and at the same time the threshold voltage of the T212 increase by the back gate effect caused by the fact that the voltage of the source electrode lowers less than the voltage of the substrate. Owing to these effects, the through current can be reduced. |
