| 发明名称 |
COMPOSITE SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND PROCESS FOR PROD UCTION OF SAME |
| 摘要 |
PURPOSE:To form the base region of a horizontal transistor by diffusion and the base region of a vertical transistor by uniform vapor growth method, thereby obtaining a composite semiconductor IC device wherein the hFE, fT of these transistors are improved. |
| 申请公布号 |
JPS5243384(A) |
申请公布日期 |
1977.04.05 |
| 申请号 |
JP19750117735 |
申请日期 |
1975.10.01 |
| 申请人 |
HITACHI LTD |
发明人 |
IWAMATSU SEIICHI;HORIE NOBORU |
| 分类号 |
H01L27/082;H01L21/331;H01L21/8226;H01L27/02;H01L29/73 |
主分类号 |
H01L27/082 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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