| 摘要 |
A semiconductor memory device of the invention includes a memory cell array having a plurality of memory cells, row selector for selecting a row of the memory cell array corresponding to a row address of an input address, and column selector for selecting a plurality of columns of a memory cell array corresponding to a column address of an input address, and also selecting a plurality of columns of a memory cell array corresponding to at least one column address other than a column address of an input address. The device also includes a sense amplifier for sensing data stored in memory cells. The sense amplifier has at least two sense amplifier groups, the sense amplifier groups sensing data read from a plurality of memory cells corresponding to an input address, and data read from a plurality of memory cells corresponding to the row address of an input address and at least one other column address. The device has a page mode for rapidly switching and outputting data from a plurality of memory cells which have been read in parallel to sense amplifier in accordance with an input address.
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