| 摘要 |
<p>On simulating ion implantation on the basis of Monte Carlo method, a plurality of triangle meshes are produced to a polygonal substrate to be label serial numbers at a first step (S1). An ion is implanted as an implanted ion to the polygonal substrate at a second step (S2). At a third step (S3), the triangle meshes are checked in an ascending order until one of triangle meshes is found as a specific triangle mesh in which the implanted ion is positioned. Point defect concentration is extracted from the specific triangle mesh at a fourth step (S4). Random numbers are generated in order to calculate scattering of the implanted ion a fifth step (S5, S6). The point defect concentration is renewed into a renewed point defect concentration in the specific triangle mesh at a sixth step (S7). The energy, the position, and the travelling direction is renewed in the implanted ion at a seventh step (S8). The third to the seventh steps is repeated until the implanted ion stops in said polygonal substrate. <IMAGE></p> |
