| 摘要 |
A step-and-scan technique for patterning a photoresist film formed on a wafer comprises the steps of storing a relationship between a film thickness and an optimum offset amount of a focal position from the film surface, measuring a first ordinate of the wafer surface at each of the several focusing positions of the wafer, forming a photoresist on the wafer, measuring a second ordinate of the film surface to obtain a film thickness, exposing the photoresist film at each focusing position based on the optimum offset amount of the each focal position which is retrieved based on the film thickness.
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