| 摘要 |
PROBLEM TO BE SOLVED: To polish the surface of an SiO2 insulating film or the like at a high speed without flaws by a method in which a reaction product layer obtained by chemical reaction of slurry, in which cerium oxide particle is dispersed, an insulating film layer is mechanically removed with the use of cerium oxide abrasive agent which contains slurry. SOLUTION: When the surface of an SiO2 insulating film charged negatively in a solution whose hydrogen ion concentration is at least pH3 is polished with slurry which comprises cerium oxide particle that is charged positively, a passivation film whose main component is cerium oxide is formed, and the passivation film can not be removed by rinsing with water. Therefore, cerium oxide particle is charged negatively to form a passivation film, the passivation film is enhanced in negative absolute value so as to be removed by rinsing with water and brush, then the passivation film and a reaction product layer are removed by cerium oxide particle of excellent crystallinity, and the reaction product layer is easily removed, another reaction product layer quickly formed after removal can also be quickly removed, so that the surface of an SiO2 insulating film can be polished at a high speed. |
