| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device where a capacitive element with large charge storage capacity is provided on a connection hole, and a method for manufacturing the semiconductor device while increase in manufacturing cost is suppressed. SOLUTION: With a Ti/TiN film 24 and a W film 5 formed, the W film 25 is left out only in a connection hole 23 through etching, then the Ti/TiN film 24 is over-etched to form a groove 61 between the inside surface of connection hole 23 and a plug 62, thus a capacitive element 66 is formed with a polycrystal Si film 63, an SiO2 film 64, and a polycrytstal Si film 65 buried in the groove 61. Therefore, the polycrystal Si film 63 is cubic, resulting in the capacitive element 66 of wide charge storage area and large charge storage capacity. |
