| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a carbon nanotube field effect transistor, stably exhibiting superior electric conduction characteristics, with good reproducibility. <P>SOLUTION: A silicon oxide film is formed in a contact region of a silicon substrate by a LOCOS method first. Then, an insulating film thinner than the silicon oxide film in the contact region is formed in a channel region of the silicon substrate. After a carbon nanotube forming a channel is arranged on the silicon substrate, the carbon nanotube is coated with a protection film. Lastly, a source electrode and a drain electrode are formed respectively, and then electrically connected to the carbon nanotube. The field effect transistor which is thus manufactured does not have the carbon nanotube as the channel contaminated, so the field effect transistor stably exhibits the superior electric conduction characteristics. <P>COPYRIGHT: (C)2010,JPO&INPIT |
