| 摘要 |
A chemically amplified resist material comprising: a) a homopolymer or a copolymer of hydroxystyrene or hydroxystyrene partly protected by a group sensitive to an acid such as a tetrahydropyranyl or t-butoxycarbonyl group, b) a dissolution inhibitor such as poly(N,O-acetal) or phenol or bisphenol protected by a group cleavable with an acid, c) a photosensitive compound capable of generating an acid upon exposure, d) a base capable of degrading upon radiation to regulate the line width in a period between the exposure step and the processing steps after exposure, e) a low-molecular weight phenolic or polyphenolic compound having a structure represented by the following general formula or a mixture of the phenolic or polyphenolic compounds: n integer of 0 to 4, n+m</=5, and p is an integer of 1 to 10, each R is a C1-C12 alkyl group or an unsubstituted or substituted cycloalkyl group or a C1-C5 hydroxyalkyl group, provided that hydrogen atoms may be substituted with a halogen atom and, when m is not less than 2, each R may be the same or different; A represents a hydrocarbon atomic grouping, having a valence of p, including an unsubstituted or substituted C1-C100 alicyclic, chain aliphatic, or aromatic hydrocarbon or a combination thereof with the carbon atoms being optionally substituted with an oxygen atom, provided that when p is 1, A may represent a hydrogen atom and, when p is 2, A may represent -S-, -SO-, -SO2-, -O-, -CO-, or a direct bond, and f) a solvent for dissolving the components a) to e).
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| 申请人 |
HOECHST JAPAN LIMITED |
发明人 |
PADMANABAN, MUNIRATHNA;SUEHIRO, NATSUMI;KINOSHITA, YOSHIAKI;FUNATO, SATORU;MASUDA, SEIYA;OKAZAKI, HIROSHI;PAWLOWSKI, GEORG |
