发明名称 |
METHOD FOR FORMING METAL CONNECTION LAYER |
摘要 |
This method is on metal wiring layer forming method, which, to overcome the problems caused by a silicon lump damaging the metal layer and inner metal oxide film, deposits an anti-reflect film on the metal layer, forms a protective spacer on the side wall of the metal layer, and eliminates the exposed silicon lump by wet etching process, so that yield of the semiconductor devices can be improved.
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申请公布号 |
KR0131730(B1) |
申请公布日期 |
1998.04.14 |
申请号 |
KR19940011000 |
申请日期 |
1994.05.20 |
申请人 |
HYUNDAI ELECTRONICS IND. CO.,LTD |
发明人 |
JUNG, JIN-KI;PARK, JONG-HAN |
分类号 |
H01L21/28;(IPC1-7):H01L21/28 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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