| 摘要 |
PROBLEM TO BE SOLVED: To develop enough antireflection characteristics and excellent heat resistance in a simple layer structure by forming on a substrate, from the substrate side, a titanium oxide nitride film and a film essentially comprising silica, and specifying the number ratio of oxygen atoms to titanium atoms in the titanium oxide nitride. SOLUTION: This light-absorbing antireflection body is obtd. by forming on a substrate, from the substrate side, a titanium oxide nitride film having 5 to 25nm geometric film thickness and a film essentially silica having 70 to 130nm geometric film thickness in this order. The number ratio of oxygen atoms to titanium atoms in the titanium oxide nitride is controlled to 0.11 to 0.33. For example, a film forming chamber is evacuated to 2μTorr, into which sputtering gas is introduced. Electric power in supplied on a titanium target to form a titanium oxide nitride film to 9nm film thickness on a soda lime glass plate. Almost similarly a silicon nitride film of 5nm film thickness is formed on the film and further a silica having 90nm film thickness is formed thereon. The number ratio of oxygen atoms to titanium atoms in the titanium oxide nitride is 0.21. |
