CONTACT HOLE FORMATION METHOD OF SEMICONDUCTOR DEVICE

摘要

The method is forming a contact hole of a semiconductor device including the processes of: forming a spacer by using an oxide on the side wall of a word line after forming a word line on top of a semiconductor substrate and forming an insulating film on top of the word line; depositing a silicon oxide film as an insulating film; forming a planarization film by using a BPSG on top of the silicon oxide film; forming a contact mask; forming a contact hole by blanket etch back of the planarization film and the silicon oxide film; and etching the contact mask and the polymer.