MOSFET

摘要

The present invention is to provide a MOS (metal oxide semiconductor) transistor. The MOS transistor according to the present invention includes a source(2), a drain(3) and a gate(4) formed on a semiconductor device(1) and a Vss line(50) connected with the source(2), an insulating layer(6) and a Vcc line(7) connected with the drain(3). The present invention is characterized in that the Vss line 50 is extended to between the gate 4 and Vcc line 7. Thereby, the present invention prevents device characteristic with variation caused by movement of positive mobile ions due to electric field.