| 摘要 |
PURPOSE:To provide an aluminum nitride-based sintered compact with a metallized metal layer having high bonding strength of the metal layer to the sintered compact and suitable for use as a circuit board, a package for housing a semiconductor device, etc. CONSTITUTION:A metallized metal layer formed by incorporating 3.0-20.0wt.% manganese oxide powder, 3.0-20.0wt.% silicon oxide powder and 1.0-10.0wt.% erbium-aluminum garnet powder into 70.0-90.0-wt.% molybdenum powder is joined to an aluminum nitride-based sintered compact. |
