发明名称 High density wirebond chip interconnect for multi-chip modules
摘要 The multi-chip module comprises a multi-layer substrate 102 and a patterned metallization layer formed on each layer of the substrate. A multi-tiered cavity is formed with an integrated circuit (IC) mounting surface at the bottom of the cavity. A plurality of ICs 101 are mounted on the IC mounting surface of the cavity. A first set of wire bonds 106 extends from at least one IC to the exposed portions of patterned metallization of at least two tiers of the multi-tiered cavity. A second set of wire bonds 105 extends from the at least one IC to bond pads of an adjacent IC. A third set of wire bonds 105 extends from the at least one IC to bond pads of the adjacent IC such that the third set of wire bonds has a higher loop height than the second set of wire bonds.
申请公布号 GB2317743(A) 申请公布日期 1998.04.01
申请号 GB19970011555 申请日期 1997.06.04
申请人 * HEWLETT-PACKARD COMPANY 发明人 KENNETH * RUSH
分类号 H01L25/00;H01L21/60;H01L23/52;H01L25/065 主分类号 H01L25/00
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