HIGH BREAKDOWN VOLTAGE MOS TRANSISTOR,申请号JP19960236050-传众专利搜索

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发明名称	HIGH BREAKDOWN VOLTAGE MOS TRANSISTOR
摘要
申请公布号	JPH1084111(A)	申请公布日期	1998.03.31
申请号	JP19960236050	申请日期	1996.09.06
申请人	MATSUSHITA ELECTRON CORP	发明人	YAMAMOTO ATSUYA
分类号	H01L29/06;H01L29/08;H01L29/78;(IPC1-7):H01L29/78	主分类号	H01L29/06
代理机构		代理人
主权项
地址

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